Hi Jerry, and GM Evan,
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Evan is correct in all the points he made. Also note that the .asc file he provided includes a model for the BS170 transistor.
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There is possibly a way to create an L502 inductive spike in QMX, but not in the same end-of-transmission way that QDX is susceptible. In QMX the envelope shaping modulator protects against that possibility, if it is functioning properly.
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In QMX an inductive voltage spike might result from a rapid change in load impedance , for example when an ATU is searching for best match and undergoes a big transition. The PA current would try to change rapidly and L502 would respond with an Ldi/dt kick. I have not seen that happen physically but it can be seen in simulation.
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JZ KJ4A?
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