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1) Yes, PiN with an intrinsic layer is essentially "very very very lightly doped" and therefore HV. I should have thought of that, mind is getting rusty... thanks for bringing that up. PiN is also very low capacitance in reverse bias, often used in very high frequency applications.

Also, I once had an idea to use a large-area PiN diode in reverse bias as a radiation detector! (it should work. I don't know how well.)

2) Yes! you can use most any HV device for the cascode or for the series pass element, except a npn BJT will introduce new base current error and would need to be a darlington.

I recommend what Michael found at digikey:

One is depletion, one is enhancement, both are MosFet.

I purchased some of the cheaper depletion mode Mosfets. I only used the n-ch JFET in the simulation because it is also depletion mode (I could not find a depletion mode MosFet in the sim library to use.).

rogerw

Roger et al:
?Some hv diodes are PiN, there is an intrinsic band.?
Supposedly the IN4007 is one of the commonly available diodes which some people claimed had an "i" layer. Used them as low cost RF PiN diodes.

My mind is wandering again. I have to look at Roger's idea of a series regulator again. Is it possible to use some more common part in stead of the JFET pass transistor? in your circuit ?

The actual voltage drop across the pass transistor is small so some more generic part could be used ?

P

-- 
rogerw
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