I couldn't agree more, Fred.? Audio, yes. ... RF, likely not.? But what about below 100 kHz where most of my application lands?? I'm primarily interested in "DC" through 100 or so kHz.
On Fri, Mar 21, 2025 at 7:53?AM Fred M via <dl4zao=[email protected]> wrote:
I doubt, that paralleling FETs in an reactance driven HiZ? application is worth the effort. The noise figure of an Hi-Z FET Amplifier ist primarily dominated by the thermal noise of the Gate bias Resistor of 22 Megohm which is much higher, than the FET noise. It may make sense in Low-Noise Audio applications, where the source impedance is low, but IMHO not as an e-field probe for RF-reception.
